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TPS2065DDBVR Datasheet(PDF) 4 Page - Texas Instruments |
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TPS2065DDBVR Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 24 page  4 TPS2065D SLVSDQ4 – DECEMBER 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Absolute maximum ratings apply over recommended junction temperature range. (3) Voltages are with respect to GND unless otherwise noted. (4) See Input and Output Capacitance . 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) (3) MIN MAX UNIT Voltage range on IN, OUT, EN, FLT (4) –0.3 6 V Voltage range from IN to OUT –6 6 V Maximum junction temperature, TJ Internally Limited Storage temperature, Tstg –60 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (3) VOUT was surged on a pcb with input and output bypassing per Input and Output Capacitance (except input capacitor was 22 µF) with no device failures. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 IEC 61000-4-2 contact discharge (3) ±8000 IEC 61000-4-2 air-gap discharge ±15000 (1) Some package and current rating may request an ambient temperature derating of 85°C. 7.3 Recommended Operating Conditions MIN NOM MAX UNIT VIN Input voltage, IN 4.5 5.5 V VEN Input voltage, EN 0 5.5 V VIH High-level input voltage, EN 2 V VIL Low-level input voltage, EN 0.7 V IOUT Continuous output current, OUT(1) 1 A A TJ Operating junction temperature –40 125 °C IFLT Sink current into FLT 0 5 mA (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPS2065D UNIT DBV (SOT-23) 5 PINS RθJA Junction-to-ambient thermal resistance 224.9 °C/W RθJCtop Junction-to-case (top) thermal resistance 95.2 °C/W RθJB Junction-to-board thermal resistance 51.4 °C/W ψJT Junction-to-top characterization parameter 6.6 °C/W ψJB Junction-to-board characterization parameter 50.3 °C/W RθJCbot Junction-to-case (bottom) thermal resistance N/A °C/W RθJACustom See Power DIssipation and Junction Temperature 139.3 °C/W |
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