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CSD18513Q5A Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18513Q5A Datasheet(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD18513Q5A www.ti.com SLPS623 – NOVEMBER 2016 Product Folder Links: CSD18513Q5A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain to-source voltage VGS = 0 V, ID = 250 μA 40 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.4 V RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 19 A 4.1 5.3 m Ω VGS = 10 V, ID = 19 A 2.8 3.4 gfs Transconductance VDS = 4 V, ID = 19 A 89 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 3300 4280 pF Coss Output capacitance 333 433 pF Crss Reverse transfer capacitance 178 231 pF RG Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5 V) VDS = 20 V, ID = 19 A 23 30 nC Qg Gate charge total (10 V) 47 61 nC Qgd Gate charge gate-to-drain 9.2 nC Qgs Gate charge gate-to-source 9.6 nC Qg(th) Gate charge at Vth 6.0 nC Qoss Output charge VDS = 20 V, VGS = 0 V 15.3 nC td(on) Turnon delay time VDS = 20 V, VGS = 10 V, IDS = 19 A, RG = 0 6 ns tr Rise time 12 ns td(off) Turnoff delay time 21 ns tf Fall time 4 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 19 A, VGS = 0 V 0.8 1.0 V Qrr Reverse recovery charge VDS= 20 V, IF = 19 A, di/dt = 300 A/μs 14.7 nC trr Reverse recovery time 16 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 1.3 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 50 °C/W |
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