Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼

Delete All
ON OFF
ALLDATASHEET.ES

X  

Preview PDF Download HTML

CSD18510KTT Datasheet(PDF) 3 Page - Texas Instruments

Click here to check the latest version.
No. de Pieza. CSD18510KTT
Descripción  CSD18510KTT 40-V N-Channel NexFET Power MOSFET
Descarga  13 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo 

CSD18510KTT Datasheet(HTML) 3 Page - Texas Instruments

 
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
3
CSD18510KTT
www.ti.com
SLPS638 – NOVEMBER 2016
Product Folder Links: CSD18510KTT
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
40
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 32 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
1.4
1.7
2.3
V
RDS(on)
Drain-to-source on resistance
VGS = 4.5 V, ID = 100 A
2.0
2.6
m
VGS = 10 V, ID = 100 A
1.4
1.7
gfs
Transconductance
VDS = 4 V, ID = 100 A
330
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 20 V, ƒ = 1 MHz
8770
11400
pF
Coss
Output capacitance
832
1080
pF
Crss
Reverse transfer capacitance
424
551
pF
RG
Series gate resistance
0.9
1.8
Qg
Gate charge total (4.5 V)
VDS = 20 V, ID = 100 A
66
85
nC
Qg
Gate charge total (10 V)
132
171
nC
Qgd
Gate charge gate-to-drain
24
nC
Qgs
Gate charge gate-to-source
32
nC
Qg(th)
Gate charge at Vth
17
nC
Qoss
Output charge
VDS = 20 V, VGS = 0 V
36
nC
td(on)
Turnon delay time
VDS = 20 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
10
ns
tr
Rise time
8
ns
td(off)
Turnoff delay time
29
ns
tf
Fall time
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 100 A, VGS = 0 V
0.85
1.0
V
Qrr
Reverse recovery charge
VDS= 20 V, IF = 100 A,
di/dt = 300 A/μs
70
nC
trr
Reverse recovery time
41
ns
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance
0.8
°C/W
RθJA
Junction-to-ambient thermal resistance
62
°C/W


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13 


Datasheet Download




Enlace URL




Privacy Policy
ALLDATASHEET.ES
Does ALLDATASHEET help your business so far?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn