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FP31QF Datasheet(PDF) 10 Page - WJ Communication. Inc.

No. de pieza FP31QF
Descripción Electrónicos  2-Watt HFET
Download  13 Pages
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Fabricante Electrónico  WJCI [WJ Communication. Inc.]
Página de inicio  http://www.wj.com
Logo WJCI - WJ Communication. Inc.

FP31QF Datasheet(HTML) 10 Page - WJ Communication. Inc.

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Specifications and information are subject to change without notice
WJ Communications, Inc
• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
November 2004
FP31QF
2-Watt HFET
Product Information
The Communications Edge
TM
Reference Design: 3500 MHz
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, Ids = 450 mA, 25°C
Frequency
MHz
3500
S21 – Gain
dB
11.9
S11 – Input Return Loss
dB
-16
S22 – Output Return Loss
dB
-8.8
Output P1dB
dBm
+33.5
Output IP3
(+18 dBm / tone, 1 MHz spacing)
dBm
+45
The 3.5 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain any FP31QF evaluation board and modify it with the circuit shown to
achieve the performance shown in this reference design.
3.3
3.35
3.4
3.45
3.5
3.55
3.6
3.65
3.7
Frequency (GHz)
Measured S-Parameters
-25
-20
-15
-10
-5
0
5
10
15
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Circuit Board Material: .014” FR-4 (εr = 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50 Ω.
Bill of Materials
Ref. Desig.
Value
Part style
Size
C1, C4, C8, C10
22 pF
Chip capacitor
0603
C2
0.9 pF
Chip capacitor
0603
C3
1.0 pF
Chip capacitor
0603
C6, C11
0.018
µF
Chip capacitor
0805
C7
1000 pF
Chip capacitor
0603
C12
0.1
µF
Chip capacitor
1206
L1, L2
6.8 nH
Wirewound chip inductor
0805
L3
3.3 nH
Multilayer chip inductor
0603
R1
2.2 Ω
Chip resistor
0603
R2
50 Ω
Chip resistor
0603
Q1
FP31QF
WJ 2W HFET
QFN 6x6
C5
Do Not Place
• Both the C2 and C3 placements are between the first and second via locations
along the main microstrip line leading from the FP31QF device. Further
descriptions are shown in the diagram on the left.
• The via hole spacing along the main microstrip line is .040”.
• The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
• The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
CAP
C=
ID=
22 pF
C1
IND
L=
ID=
6.8 nH
L2
CAP
C=
ID =
22 pF
C10
CAP
C=
ID=
1.8e 4 pF
C11
CAP
C=
ID=
1e 5 pF
C12
CAP
C=
ID=
22 pF
C4
CA P
C=
ID=
1.8e 4 pF
C8
CA P
C=
ID=
22 pF
C6
CAP
C=
ID =
100 0 pF
C7
CAP
C=
ID=
1 pF
C3
IND
L=
ID=
6.8 nH
L1
RES
R=
ID=
51 Ohm
R2
CAP
C=
ID=
DNP pF
C5
IND
L=
ID=
3.3 nH
L3
TL INP
F0 =
Loss=
Eeff=
L=
Z0 =
ID=
0 MHz
0
3.46
65 mil
50 Ohm
TL2
CAP
C=
ID=
0.9 pF
C2
TL INP
F0 =
Loss=
Eeff=
L=
Z0 =
ID=
0 MHz
0
3.46
30 mil
50 O hm
TL1
RES
R=
ID=
2.2 O hm
R1
1
2
SUB CKT
NET=
ID=
"FP31QF"
Q1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
-Vgg
Vds=9V @ 450 mA
C2
C3


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