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LM4051BIM3-ADJ Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM4051BIM3-ADJ
Descripción Electrónicos  Precision Micropower Shunt Voltage Reference
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4051BIM3-ADJ Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Electrical Characteristics (continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test condi-
tions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to am-
bient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax −TA)/θJA or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM4051, TJmax = 125˚C, and the typical thermal resistance (θJA), when board mounted, is
280˚C/W for the SSOT-23 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin. The machine model is a 200 pF capacitor discharged di-
rectly into each pin.
Note 4: Typicals are at TJ = 25˚C and represent most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods.
The limits are used to calculate National’s AOQL.
Note 6: The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance
±[(
∆V R/∆T)(max ∆T)(VR)]. Where, ∆VR/∆T is the VR temperature coefficient, max∆T is the maximum difference in temperature from the reference point of 25 ˚C to
T MAX or TMIN, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where
max
∆T=65˚C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/˚C x 65˚C
B-grade: ±0.522% = ±0.2% ±50 ppm/˚C x 65˚C
C-grade: ±0.825% = ±0.5% ±50 ppm/˚C x 65˚C
Therefore, as an example, the A-grade LM4051-1.2 has an over-temperature Reverse Breakdown Voltage tolerance of ±1.2V x 0.425% = ±5.2 mV.
Note 7: When VOUT ≤ 1.6V, the LM4051-ADJ in the SSOT-23 package must operate at reduced IR. This is caused by the series resistance of the die attach between
the die (-) output and the package (-) output pin. See the Output Saturation curve in the Typical Performance Characteristics section.
Note 8: Reference voltage and temperature coefficient will change with output voltage. See Typical Performance Characteristics curves.
Note 9: Long term stability is VR @ 25˚C measured during 1000 hrs.
Note 10: Thermal hysteresis is defined as the changes in 25˚C output voltage before and after cycling the device from −40˚C or +125˚C.
Typical Performance Characteristics
Temperature Drift for Different
Average Temperature Coefficient
DS101222-19
Output Impedance vs Frequency
DS101222-4
www.national.com
5


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