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1N5060 Datasheet(PDF) 2 Page - NXP Semiconductors |
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1N5060 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Jun 19 2 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V VRWM crest working reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V VR continuous reverse voltage 1N5059 − 200 V 1N5060 − 400 V 1N5061 − 600 V 1N5062 − 800 V IF(AV) average forward current Ttp =45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 2.0 A Tamb =80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.8 A IFSM non-repetitive peak forward current t = 10 ms half sinewave − 50 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C |
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Descripción similar - 1N5060 |
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