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2SC3032 Datasheet(Hoja de datos) 1 Page - Inchange Semiconductor Company Limited

No. de Pieza. 2SC3032
Descripción  isc Silicon NPN Darlington Power Transistor
Descarga  2 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SC3032
DESCRIPTION
·
Low Collector Saturation Voltage
·
Low Collector-Emitter Breakdown Voltage
·
Good Linearity of hFE
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
15
A
IB
Base Current-Continuous
2.5
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150




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