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TPC8004 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPC8004
Descripción Electrónicos  Silicon N Channel MOS Type (MOSVI)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8004 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPC8004
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8004
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.)
High forward transfer admittance : |Yfs| = 6 S (typ.)
Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
2.4
W
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
32.5
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration


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