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TPS26600RHFR Datasheet(PDF) 5 Page - Texas Instruments |
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TPS26600RHFR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 49 page 5 TPS2660 www.ti.com SLVSDG2A – JULY 2016 – REVISED AUGUST 2016 Product Folder Links: TPS2660 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (all voltages referred to GND (unless otherwise noted)) (1) MIN MAX UNIT IN , IN-OUT Input voltage –60 60 V IN , IN-OUT (10 msec transient), TA = 25 °C –70 70 V [IN, OUT, FLT, UVLO, SHDN] to RTN –0.3 60 V [OVP, dVdT, ILIM, IMON, MODE] to RTN –0.3 5 V RTN –60 0.3 V IFLT, IdVdT, ISHDN Sink current 10 mA IdVdT, IILIM, IIMON Source current Internally limited TJ Operating junction temperature –40 150 °C Transient junction temperature –65 T(TSD) °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250 7.3 Recommended Operating Conditions over operating free-air temperature range (all voltages referred to GND (unless otherwise noted)) MIN NOM MAX UNIT IN Input voltage –55 55 V UVLO, OUT, FLT 0 55 OVP, dVdT, ILIM, IMON, SHDN 0 4 ILIM Resistance 5.36 120 kΩ IMON 1 IN, OUT External capacitance 0.1 µF dVdT 10 nF – dV(IN)/dt V(IN) falling slew rate 20 V/µs TJ Operating junction temperature –40 25 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPS2660 UNIT PWP (HTSSOP) RHF (VQFN) 16 PINS 24 PINS RθJA Junction-to-ambient thermal resistance 38.6 30.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 22.7 20.8 °C/W RθJB Junction-to-board thermal resistance 18.2 7.6 °C/W ψJT Junction-to-top characterization parameter 0.5 0.2 °C/W ψJB Junction-to-board characterization parameter 18 7.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.5 1.7 °C/W |
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