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S-8351A27MC-J2MT2U Datasheet(PDF) 22 Page - Seiko Instruments Inc |
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S-8351A27MC-J2MT2U Datasheet(HTML) 22 Page - Seiko Instruments Inc |
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22 / 51 page  STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER S-8351/8352 Series Rev.3.0_01 22 4. 2 Bipolar (NPN) Type A circuit example using the CPH3210 (hFE = 200 to 560) from Sanyo Electric Co., Ltd. as a bipolar transistor (NPN) is shown in Figure 24 to 26 in the “ Standard Circuits”. The hFE value and Rb value of the bipolar transistor determine the driving capacity to increase the output current using a bipolar transistor. A peripheral circuit example of the transistor is shown in Figure 20. Nch Pch VOUT *1 IPK EXT Cb 2200 pF Rb 1 k Ω *1. VDD for D type. Figure 20 External Transistor Peripheral Circuit The recommended Rb value is around 1 k Ω. Actually, calculate the necessary base current (Ib) from the bipolar transistor (hFE) using FE PK b h I I = , and select the smaller Rb value than EXTH b OUT b I 4 . 0 I 7 . 0 V R − − = *1. A small Rb value can increase the output current, but the efficiency decreases. Since a current may flow on the pulse and the voltage may drop due to wiring resistance or other factors in the actual circuit, therefore the optimum Rb value should be determined by experiment. Connecting the speed-up capacitor (Cb) in parallel with the Rb resistance as shown in Figure 20, decreases switching loss and improves the efficiency. The Cb value is calculated according to 7 . 0 f R π 2 1 C osc b b • • • ≤ . Select a Cb value after performing sufficient evaluation since the optimum Cb value differs depending upon the characteristics of the bipolar transistor. *1. For D type, EXTH b DD b I 4 . 0 I 7 . 0 V R − − = . |
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