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BCP56-16T3G Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza BCP56-16T3G
Descripción Electrónicos  NPN Silicon Epitaxial Transistor
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCP56-16T3G Datasheet(HTML) 4 Page - ON Semiconductor

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BCP56 Series
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
IB, BASE CURRENT (mA)
0.05
0.1
0.2
0.5
2.0
5.0
10
20
50
1.0
50
mA
100mA
TJ = 25°C
250mA
500mA
IC = 10mA
Figure 6. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
1
0.1
0.01
0.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
0.5
0.7
1.0
VCE = 2 V
150
°C
25
°C
−55
°C
Figure 7. Collector Saturation Region
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Safe Operating Area
1.6
0.8
0.0
100
20
0160
120
40
140
60
80
1.0
0.2
1.2
0.4
1.4
0.6
Figure 9. Power Derating Curve
VCE, COLLECTOR EMITTER VOLTAGE (V)
100
10
1
0.1
0.01
1
0.1
100 mS
10 mS
1 mS
1 S


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