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BUK108-50GS Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK108-50GS Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFET REVERSE DIODE CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V SDS Forward voltage I S = 15 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V t rr Reverse recovery time not applicable 1 -- -- ENVELOPE CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT L d Internal drain inductance Measured from upper edge of tab - 2.5 - nH to centre of die L s Internal source inductance Measured from source lead - 7.5 - nH solering point to source bond pad Fig.2. Normalised limiting power dissipation. P D% = 100⋅PD/PD(25 ˚C) = f(Tmb) Fig.3. Normalised continuous drain current. I D% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V Fig.4. Safe operating area. T mb = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.5. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1 100 VDS / V 100 10 1 0.1 BUK108-50GS 10 ID & IDM / A DC Overload protection characteristics not shown 100 us 1 ms 10 ms 100 ms 10 us tp = RDS(ON) = VDS/ID 0 20 40 60 80 100 120 140 Tmb / C ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1E-07 1E-05 1E-03 1E-01 1E+01 t / s Zth / (K/W) 10 1 0.1 0.01 0 0.5 0.2 0.1 0.05 0.02 D = tp tp T T P t D D = BUK108-50GS 1 The reverse diode of this type is not intended for applications requiring fast reverse recovery. June 1996 5 Rev 1.000 |
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