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BUK200-50X Datasheet(PDF) 10 Page - NXP Semiconductors

No. de pieza BUK200-50X
Descripción Electrónicos  PowerMOS transistor TOPFET high side switch
Download  13 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK200-50X Datasheet(HTML) 10 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK200-50X
TOPFET high side switch
Fig.28. Typical negative load clamping voltage.
V
LG = f(Tj); parameter IL; condition VIG = 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL = f(Tj); parameter IL; condition IG = 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
Fig.31. Typical reverse diode characteristic.
I
L = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
Fig.32. Typical output capacitance. T
mb = 25 ˚C
C
bl = f(VBL); conditions f = 1 MHz, VIG = 0 V
Fig.33. Typical overload characteristic, T
mb = 25 ˚C.
I
L = f(VBL); condition VBG = 13 V; parameter tp
-60
-20
20
60
100
140
180
Tj / C
VLG / V
BUK200-50X
-22
-20
-18
-16
-14
-12
-10
5 A
1 mA
IL =
tp = 300 us
-1.1
-0.9
-0.7
-0.5
-0.3
-0.1
VBL / V
IL / A
BUK200-50X
0
-5
-10
-15
-20
-60
-20
20
60
100
140
180
Tj / C
VBL / V
BUK200-50X
65
60
55
50
100 uA
1 mA
2.5 A
IL =
tp = 300 us
0
20
40
VBL / V
Cbl / pF
BUK200-50X
1000
100
10
30
50
-1
-0.8
-0.6
-0.4
-0.2
0
VBG / V
IG / mA
BUK200-50X
0
-50
-100
-150
-200
0
2
4
6
8
10
12
14
16
18
20
VBL / V
IL / A
BUK200-50X
50
40
30
20
10
0
tp =
300 us
VBL(TO) typ.
current limiting
i.e. before short
circuit load trip
50 us
April 1995
10
Rev 1.000


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