© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 4

Publication Order Number:

BC807−25W/D

1

BC807-25W, BC807-40W

General Purpose

Transistors

PNP Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

−45

V

Collector − Base Voltage

−50

V

Emitter − Base Voltage

−5.0

V

Collector Current − Continuous

−500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

460

mW

Thermal Resistance,

Junction−to−Ambient

272

°C/W

Junction and Storage Temperature

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SC−70

CASE 419

STYLE 3

1

2

3

http://onsemi.com

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

5x M

G

G

5x

= Device Code

x = B or C

M

= Date Code*

G

= Pb−Free Package

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.