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LM675T Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM675T Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 8 page Application Hints (Continued) ample, we assume a lubricated mica insulator between the LM675 and the heat sink. The heat sink thermal resistance must then be less than 4.2˚C/W − 2˚C/W − 1.6˚C/W = 0.6˚C/W. This is a rather large heat sink and may not be practical in some applications. If a smaller heat sink is required for rea- sons of size or cost, there are two alternatives. The maxi- mum ambient operating temperature can be restricted to 50˚C (122˚F), resulting in a 1.6˚C/W heat sink, or the heat sink can be isolated from the chassis so the mica washer is not needed. This will change the required heat sink to a 1.2˚C/W unit if the case-to-heat-sink interface is lubricated. The thermal requirements can become more difficult when an amplifier is driving a reactive load. For a given magnitude of load impedance, a higher degree of reactance will cause a higher level of power dissipation within the amplifier. As a general rule, the power dissipation of an amplifier driving a 60˚ reactive load will be roughly that of the same amplifier driving the resistive part of that load. For example, some re- active loads may at some frequency have an impedance with a magnitude of 8 Ω and a phase angle of 60˚. The real part of this load will then be 8 Ω x cos 60˚ or 4Ω, and the am- plifier power dissipation will roughly follow the curve of power dissipation with a 4 Ω load. Typical Applications Non-Inverting Unity Gain Operation DS006739-6 Inverting Unity Gain Operation DS006739-7 www.national.com 6 |
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