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ADuCM362BCPZ128 Datasheet(PDF) 8 Page - Analog Devices |
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ADuCM362BCPZ128 Datasheet(HTML) 8 Page - Analog Devices |
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8 / 24 page  ADuCM362/ADuCM363 Data Sheet Rev. 0| Page 8 of 24 Parameter Test Conditions/Comments Min Typ Max Unit EXCITATION CURRENT SOURCES Output Current Available from each current source; value programmable from 10 μA to 1 mA 10 1000 μA Initial Tolerance at 25°C1 IOUT ≥ 50 μA ±5 % Drift1 Using internal reference resistor 100 400 ppm/°C Using external 150 kΩ reference resistor between IREF pin and AGND; resistor must have drift specification of 5 ppm/°C 75 400 ppm/°C Initial Current Matching at 25°C1 Matching between both current sources ±0.5 % Drift Matching1 50 ppm/°C Load Regulation, AVDD1 AVDD = 3.3 V 0.2 %/V Output Compliance1 IOUT = 10 μA to 210 μA AGND − 0.03 AVDD − 0.85 V IOUT > 210 μA AGND − 0.03 AVDD − 1.1 V DAC CHANNEL SPECIFICATIONS RL = 5 kΩ, CL = 100 pF Voltage Range Internal reference 0 VREF V External reference 0 1.8 V DC Specifications11 Resolution 12 Bits Relative Accuracy ±3 LSB Differential Nonlinearity Guaranteed monotonic ±0.5 ±1 LSB Offset Error 1.2 V internal reference ±2 ±10 mV Gain Error VREF range (reference = 1.2 V) ±0.5 % NPN Mode1 Resolution 12 Bits Relative Accuracy ±3 LSB Differential Nonlinearity ±0.5 LSB Offset Error ±0.35 mA Gain Error ±0.75 mA Output Current Range 0.008 23.6 mA Interpolation Mode1, 12 Only monotonic to 14 bits Resolution 14 Bits Relative Accuracy For 14-bit resolution ±6 LSB Differential Nonlinearity Monotonic (14 bits) ±0.6 LSB Offset Error 1.2 V internal reference ±2 mV Gain Error VREF range (reference = 1.2 V) ±1 % AVDD range ±1 % DAC AC CHARACTERISTICS1 Voltage Output Settling Time 10 μs Digital-to-Analog Glitch Energy 1 LSB change at major carry (maximum number of bits changes simultaneously in the DAC0DAT register) ±20 nV-sec POWER-ON RESET (POR) POR Trip Level Voltage at DVDD pin Power-on level 1.65 V Power-down level 1.65 V Timeout from POR1 50 ms WATCHDOG TIMER (WDT)1 Timeout Period 0.00003 8192 sec Timeout Step Size T3CON[3:2] = 10 7.8125 ms FLASH/EE MEMORY1 Endurance13 10,000 Cycles Data Retention14 TJ = 85°C 10 Years |
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