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BD179G Datasheet(PDF) 1 Page - ON Semiconductor |
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BD179G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2013 Noember, 2013 − Rev. 15 1 Publication Order Number: BD179/D BD179G Plastic Medium-Power Silicon NPN Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • BD179 is complementary with BD180 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 240 W mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 4.16 _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS, 30 WATTS http://onsemi.com BD179G TO−225 (Pb−Free) 500 Units/Box MARKING DIAGRAM YWW BD179G Y = Year WW = Work Week BD179 = Device Code G = Pb−Free Package 3 BASE 1 EMITTER COLLECTOR 2 TO−225 CASE 77 STYLE 1 3 2 1 |
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