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MTB095A10KRQ8-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp.

No. de pieza MTB095A10KRQ8-0-T3-G
Descripción Electrónicos  Dual N-Channel Enhancement Mode Power MOSFET
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Fabricante Electrónico  CYSTEKEC [Cystech Electonics Corp.]
Página de inicio  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB095A10KRQ8-0-T3-G Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C714Q8
Issued Date : 2017.02.02
Revised Date :
Page No. : 5/9
MTB095A10KRQ8
Preliminary
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
NormalizedThreshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
0.001
0.01
0.1
1
10
ID, Drain Current(A)
VDS=10V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
02
4
6
Total Gate Charge---Qg(nC)
8
ID=2A
VDS=80V
VDS=20V
VDS=50V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100
μs
RDS(ON)
Limited
TA=25°C, Tj=150°, VGS=10V
RθJA=78°C/W, Single Pulse
1s
Maximum Drain Current vs Junction Temperature
0
0.5
1
1.5
2
2.5
3
3.5
4
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
VGS=10V, RθJA=78°C/W


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