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AMC1305M25-Q1 Datasheet(PDF) 4 Page - Texas Instruments |
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AMC1305M25-Q1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 38 page 4 AMC1305L25-Q1, AMC1305M05-Q1, AMC1305M25-Q1 SBAS797 – FEBRUARY 2017 www.ti.com Product Folder Links: AMC1305L25-Q1 AMC1305M05-Q1 AMC1305M25-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over the operating ambient temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, AVDD to AGND or DVDD to DGND –0.3 6.5 V Analog input voltage at AINP, AINN AGND – 6 AVDD + 0.5 V Digital input voltage at CLKIN, CLKIN_N DGND – 0.3 DVDD + 0.3 V Input current to any pin except supply pins –10 10 mA Maximum virtual junction temperature, TJ 150 °C Storage temperature, Tstg –65 150 °C (1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±2500 V Charged device model (CDM), per AEC Q100-011 ±1000 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT AVDD High-side (analog) supply voltage 4.5 5.0 5.5 V DVDD Controller-side (digital) supply voltage 3.0 3.3 5.5 V TA Operating ambient temperature range –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) AMC1305x-Q1 UNIT DW (SOIC) 16 PINS RθJA Junction-to-ambient thermal resistance 80.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 40.5 °C/W RθJB Junction-to-board thermal resistance 45.1 °C/W ψJT Junction-to-top characterization parameter 11.9 °C/W ψJB Junction-to-board characterization parameter 44.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W 7.5 Power Ratings PARAMETER TEST CONDITIONS VALUE UNIT PD Maximum power dissipation (both sides) AVDD = 5.5 V, DVDD = 5.5 V, LVDS, RLOAD = 100 Ω 89.1 mW PD1 Maximum power dissipation (high-side supply) AVDD = 5.5 V 45.1 mW PD2 Maximum power dissipation (low-side supply) DVDD = 5.5 V, LVDS, RLOAD = 100 Ω 44 mW |
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