Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

FDD068AN03L Datasheet(PDF) 7 Page - Fairchild Semiconductor

No. de pieza FDD068AN03L
Descripción Electrónicos  N-Channel PowerTrench MOSFET 30V, 35A, 6.8m?
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD068AN03L Datasheet(HTML) 7 Page - Fairchild Semiconductor

Back Button FDD068AN03L Datasheet HTML 3Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 4Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 5Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 6Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 7Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 8Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 9Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 10Page - Fairchild Semiconductor FDD068AN03L Datasheet HTML 11Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 7 / 11 page
background image
©2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application.
Therefore
the
application’s
ambient
temperature, TA (
oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild
provides
thermal
information
to
assist
the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction
temperature
or
power
dissipation.
Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
(EQ. 1)
P
DM
T
JM
T
A
()
RθJA
-----------------------------
=
Area in Inches Squared
(EQ. 2)
RθJA
33.32
23.84
0.268
Area
+
()
-------------------------------------
+
=
(EQ. 3)
RθJA
33.32
154
1.73
Area
+
()
----------------------------------
+
=
Area in Centimeters Squared
25
50
75
100
125
0.01
0.1
1
10
Figure 21. Thermal Resistance vs Mounting
Pad Area
RθJA = 33.32+ 23.84/(0.268+Area) EQ.2
AREA, TOP COPPER AREA in2 (cm2)
RθJA = 33.32+ 154/(1.73+Area) EQ.3
(0.645)
(6.45)
(64.5)
(0.0645)


Número de pieza similar - FDD068AN03L

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Inchange Semiconductor ...
FDD068AN03L ISC-FDD068AN03L Datasheet
352Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Descripción similar - FDD068AN03L

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Fairchild Semiconductor
FDMS8672S FAIRCHILD-FDMS8672S Datasheet
388Kb / 8P
   N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
FDD6692 FAIRCHILD-FDD6692 Datasheet
84Kb / 6P
   30V N-Channel PowerTrench MOSFET
FDS6672A FAIRCHILD-FDS6672A Datasheet
205Kb / 8P
   30V N-Channel PowerTrench MOSFET
FDS6692 FAIRCHILD-FDS6692 Datasheet
62Kb / 4P
   30V N-Channel PowerTrench MOSFET
FDD6670AL FAIRCHILD-FDD6670AL Datasheet
149Kb / 6P
   30V N-Channel PowerTrench MOSFET
FDD6688 FAIRCHILD-FDD6688 Datasheet
120Kb / 6P
   30V N-Channel PowerTrench MOSFET
FDS7296N3 FAIRCHILD-FDS7296N3 Datasheet
122Kb / 7P
   30V N-Channel PowerTrench MOSFET
FDD6672A FAIRCHILD-FDD6672A Datasheet
425Kb / 8P
   30V N-Channel PowerTrench MOSFET
FDD6676 FAIRCHILD-FDD6676 Datasheet
85Kb / 6P
   30V N-Channel PowerTrench MOSFET
FDD6672A FAIRCHILD-FDD6672A_01 Datasheet
80Kb / 5P
   30V N-Channel PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com