TSDP341.., TSDP343..

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Vishay Semiconductors

Rev. 1.1, 22-Aug-14

2

Document Number: 82667

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.

Fig. 1 - Output Active Low

Fig. 2 - Pulse Length and Sensitivity in Dark Ambient

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Supply voltage

-0.3 to +6

V

Supply current

3mA

Output voltage

V

Output current

5mA

Junction temperature

100

°C

Storage temperature range

-25 to +85

°C

Operating temperature range

-25 to +85

°C

Power consumption

≤ 85 °C

10

mW

Soldering temperature

t

≤ 10 s, 1 mm from case

260

°C

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply current

0.27

0.35

0.45

mA

0.45

mA

Supply voltage

2.5

5.5

V

Transmission distance

IR diode TSAL6200,

d35

m

Output voltage low

test signal see fig. 1

100

mV

Minimum irradiance

Pulse width tolerance:

test signal see fig. 1

0.15

0.30

Maximum irradiance

test signal see fig. 1

30

Maximum pulse width

s

Directivity

Angle of half transmission

distance

± 45

deg

T

t

2)

t

Optical Test Signal

Output Signal

1)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.1

10

1000

100 000

E

Output pulse width

Input burst length

Optical test signal,

λ = 940 nm,

f = 38 kHz, N = 8 carrier cycles