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SI4833BDY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4833BDY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si4833BDY Document Number: 67537 S11-1649-Rev. B, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Battery Management in Notebook PC • Non-synchronous Buck Converter in HDD Notes: a. Based on TC = 25 °C. b. Surface mounted on FR4 board. c. t 10 s. d. Maximum under steady state conditions is 120 °C/W. MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) - 30 0.068 at VGS = - 10 V - 4.6 4.6 0.110 at VGS = - 4.5 V - 3.4 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage ID (A) a 30 0.44 V at 1 A 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) VDS - 30 V Reverse Voltage (Schottky) VKA - 30 Gate-Source Voltage (MOSFET) VGS ± 20 Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 25 °C ID - 4.6 A TC = 70 °C - 3.6 TA = 25 °C - 3.8b, c TA = 70 °C - 3b, c Pulsed Drain Current (MOSFET) (t = 300 µs) IDM - 20 Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C IS - 2 TA = 25 °C - 1.4b, c Average Forward Current (Schottky) IF - 1.4b Pulsed Forward Current (Schottky) IFM - 2 Maximum Power Dissipation (MOSFET and Schottky) TC = 25 °C PD 2.75 W TC = 70 °C 1.75 TA = 25 °C 1.75b, c TA = 70 °C 1.10b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C AK A K SD G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4833BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) K A S G D P-Channel MOSFET THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d RthJA 60 71.5 °C/W Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) RthJF 35 45 |
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