SI7540ADP datasheet(6/18 Pages) VISHAY

No. de pieza	SI7540ADP

Descripción Electrónicos	N-and P-Channel 20 V (D-S) MOSFET

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Si7540ADP

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Vishay Siliconix

S16-2274-Rev. C, 14-Nov-16

6

Document Number: 62951

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating a

Power Derating

Note

a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the

package limit.

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

0

5

10

15

20

25

50

75

100

125

150

T

C - Case Temperature (°C)

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SI7540ADP Datasheet(PDF) 6 Page - Vishay Siliconix

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