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ES2B Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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ES2B Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification Surface Mount Rectifiers ES2A--ES2J Document Number: SMB102AA www.gmicroelec.com 1 FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol , Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case: DO-214AA molded plastic Terminals: Solder able per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol ES2A ES2B ES2C ES2D ES2E ES2G ES2H ES2J UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current @TA=110℃ IF(AV) 2.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125℃ IFSM 50 A Thermal Characteristics Characteristic Symbol ES2A ES2B ES2C ES2D ES2E ES2G ES2H ES2J UNITS Typical junction capacitance (Note2) CJ 18 p F Typical thermal resistance R θ JA R θ JC 80 30 ℃ /W Operating junction temperature range TJ - 55 ---- + 150 ℃ Storage temperature range TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol ES2A ES2B ES2C ES2D ES2E ES2G ES2H ES2J UNITS Maximum instantaneous forward voltage @2.0 A VF 0.95 1.25 1.7 V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ IR 5.0 200 μ A Maximum reverse recovery time (Note1) t rr 35 ns NOTE: 1. Measured with IF=0.5A, IR=1.0A, Irr=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. Pb Lead-free |
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