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AD8067 Datasheet(PDF) 7 Page - Analog Devices |
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AD8067 Datasheet(HTML) 7 Page - Analog Devices |
7 / 24 page AD8067 ABSOLUTE MAXIMUM RATINGS Parameter Rating Supply Voltage 26.4 V Power Dissipation See Figure 3 Common-Mode Input Voltage VEE – 0.5 V to VCC + 0.5 V Differential Input Voltage 1.8 V Storage Temperature –65°C to +125°C Operating Temperature Range –40°C to +85°C Lead Temperature Range (Soldering 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum Power Dissipation The associated raise in junction temperature (TJ) on the die limits the maximum safe power dissipation in the AD8067 package. At approximately 150°C, which is the glass transition temperature, the plastic will change its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8067. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in the silicon devices, potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). Assuming the load (RL) is referenced to midsupply, the total drive power is VS/2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). The difference between the total drive power and the load power is the drive power dissipated in the package. RMS output voltages should be considered. () Power Load – Power Drive Total Power Quiescent PD + = () L OUT L OUT S S S D R V – R V V I V P 2 2 × + × = If RL is referenced to VS– as in single-supply operation, then the total drive power is VS × IOUT. If the RMS signal levels are indeterminate, then consider the worst case, when VOUT = VS/4 for RL to midsupply: () () L S S S D R / V I V P 2 4 + × = In single-supply operation with RL referenced to VS–, worst case is VOUT = VS/2. Airflow will increase heat dissipation effectively, reducing θJA. In addition, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes will reduce the θJA. Figure 3 shows the maximum safe power dissipation in the pack- age versus ambient temperature for the SOT-23-5 (180°C/W) package on a JEDEC standard 4-layer board. θJA values are approximations. It should be noted that for every 10°C rise in temperature, IB approximately doubles (See Figure 22). –40 2.0 1.5 0.5 0 0 AMBIENT TEMPERATURE – °C 1.0 –30 –20 –10 80 10 20 30 40 50 60 70 SOT-23-5 Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board Rev. 0 | Page 7 of 24 |
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