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AND8116 Datasheet(PDF) 2 Page - ON Semiconductor |
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AND8116 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page AND8116/D http://onsemi.com 2 Standard Discrete RELAY DRIVERS For both type of applications industrial and automotive, the most traditional and popular relay drivers are the ones formed discretely with a bipolar transistor, two bias resistors and a free−wheeling diode. In some cases, it is required to add extra components such as MOVs (metal oxide varistors) and extra diodes to ensure proper protection. Figure 1 shows a typical discrete relay driver with the extra protection devices. Diode D1 provides reverse supply protection and diode D2 provides a clamp function to suppress the voltage spike generated by the relay’s coil during the turn−off interactions (V = Ldi/dt). A power MOV device is used to limit positive transients to within the bipolar transistor’s breakdown voltage. The saturation voltage of the bipolar transistor (typically over 1.0 V) causes high power dissipation which in some cases eliminates the option to use inexpensive surface mount package devices such as SOT−23 or smaller, therefore the need for bigger packages such as TO220 is always present. The resulting discrete circuit is expensive because it takes several components and a big space in the PC board. Figure 1. Typical Discrete Relay Driver +12 V VARISTOR 0 RELAY D1 Q1 R2 R1 +5 V/3.3 V D2 LOGIC ON Semiconductor’s RELAY DRIVERS The ON Semiconductor’s relay drivers portfolio is divided in two main categories: • Industrial version (devices NUD3105, NUD3112) • Automotive version (device NUD3124) Industrial Version Figure 2 describes the industrial relay driver version (devices NUD3105, NUD3112). This device integrates several discrete components in a single SOT−23 three leaded surface mount package to achieve a simpler and more efficient solution than the conventional discrete relay drivers. The characteristics of the integrated devices are listed below: • N−channel FET 40 V, 500 mA • ESD protection Zener diodes (7.0 V) • Bias resistors (1.0 K W in the gate and 300 K W between gate and source) • Clamping protection Zener diodes (7.0 V for 5.0 V relay’s coils, and 14 V for 12 V coils) Figure 2. Industrial Relay Driver Description (NUD3105 and NUD3112 Devices) Drain (3) 1.0 k 300 k Gate (1) Source (2) ESD Zener 7 V ESD Zener 7 V Clamp Zener 7 V or 14 V Clamp Zener 7 V or 14 V |
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