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LM4670 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM4670 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 18 page  Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note 1) 6.0V Storage Temperature −65˚C to +150˚C Voltage at Any Input Pin V DD + 0.3V ≥ V ≥ GND - 0.3V Power Dissipation (Note 3) Internally Limited ESD Susceptibility (Note 4) 2.0kV ESD Susceptibility (Note 5) 200V Junction Temperature (T JMAX) 150˚C Thermal Resistance θ JA (micro SMD) 220˚C/W θ JA (LLP) 64˚C/W θ JC (LLP) TBD˚C/W Soldering Information See AN-1112 "microSMD Wafers Level Chip Scale Package." Operating Ratings (Note 1) (Note 2) Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.4V ≤ V DD ≤ 5.5V Electrical Characteristics (Notes 1, 2) The following specifications apply for A V = 2V/V (RI = 150k Ω), R L =15µH+8 Ω + 15µH unless otherwise specified. Limits ap- ply for T A = 25˚C. Symbol Parameter Conditions LM4670 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) |V OS| Differential Output Offset Voltage V I = 0V, AV = 2V/V, V DD = 2.4V to 5.0V 25 mV (max) PSRR GSM GSM Power Supply Rejection Ratio V DD = 2.4V to 5.0V, Input Referred 64 dB CMRR GSM GSM Common Mode Rejection Ratio V DD = 2.4V to 5.0V V IC =VDD/2 to 0.5V, V IC =VDD/2 to VDD – 0.8V, Input Referred 80 dB |I IH| Logic High Input Current V DD = 5.0V, VI = 5.8V 20 100 µA (max) |I IL| Logic Low Input Current V DD = 5.0V, VI = –0.3V 1 5 µA (max) V IN = 0V, No Load, VDD = 5.0V 7.0 10 mA (max) I DD Quiescent Power Supply Current V IN = 0V, No Load, VDD = 3.6V 4.8 mA V IN = 0V, No Load, VDD = 2.4V 3.8 5 mA (max) I SD Shutdown Current V SHUTDOWN =0V V DD = 2.4V to 5.0V 0.01 1 µA (max) V SDIH Shutdown voltage input high 1.0 1.4 V (min) V SDIL Shutdown voltage input low 0.8 0.4 V (max) R OSD Output Impedance V SHUTDOWN = 0.4V >100 k Ω A V Gain 300k Ω/R I 270k Ω/R I 330k Ω/R I V/V (min) V/V (max) R SD Resistance from Shutdown Pin to GND 300 k Ω P O Output Power R L =15µH+4 Ω + 15µH, THD = 10% (max) f = 1kHz, 22kHz BW V DD =5V V DD = 3.6V V DD = 2.5V 3.0 1.5 675 W W mW R L =15µH+4 Ω + 15µH, THD+N = 1% (max) f = 1kHz, 22kHz BW V DD = 5V, V DD = 3.6V, V DD = 2.5V, 2.3 1.2 550 W W mW www.national.com 3 |
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