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LMX2330A Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LMX2330A Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 17 page Charge Pump Current Specification Definitions RF Sensitivity Test Block Diagram DS012331-25 I1 = CP sink current at VDo = VP − ∆V I2 = CP sink current at VDo = VP/2 I3 = CP sink current at VDo = ∆V I4 = CP source current at VDo = VP − ∆V I5 = CP source current at VDo = VP/2 I6 = CP source current at VDo = ∆V ∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V. 3. IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage = [1⁄2 * {|I1| − |I3|}]/[1⁄2 * {|I1| + |I3|}] * 100% and [1⁄2 * {|I4| − |I6|}]/[1⁄2 * {|I4| + |I6|}] * 100% 4. IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch = [|I2| − |I5|]/[1⁄2 * {|I2| + |I5|}] * 100% 5. IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature = [|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100% and [|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100% DS012331-28 Note: N = 10,000 R = 50 P = 64 Note: Sensitivity limit is reached when the error of the divided RF output, FoLD, is ≥ 1 Hz. www.national.com 6 |
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