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LMX3161VBH Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LMX3161VBH
Descripción Electrónicos  Single Chip Radio Transceiver
Download  14 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX3161VBH Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
The following specifications are guaranteed for V
CC = 3.6V and TA = 25˚C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RSSI (Note 11)
f
IN = 110 MHz
RSSI
out
Output Voltage
P
IN=−80 dBm@IFIN input pin
0.12
0.2
0.6
V
P
IN=−20 dBm@IFIN input pin
0.9
1.2
V
Slope
P
IN= −90 to −30 dBm@LIMIN input pin
11
18
25
mV/d
B
RSSI
Dynamic Range
P
IN min= −90 dBm@LIMIN input pin
60
dB
DC COMPENSATION CIRCUIT
V
OS
Input Offset Voltage
−5
+5
mV
V
I/O
Input/Output Voltage Swing
Centered at 1.5V
1.0
V
PP
R
SH
Sample and Hold Resistor
2000
3000
3600
FREQUENCY SYNTHESIZER
P
IN = −14 to −9 dBm
f
IN
Input Frequency Range
(Note 9)
500
1200
MHz
P
IN
Input Signal Level
Z
IN=200Ω (Note 15)
−11.5
dBm
f
OSC
Oscillator Frequency Range
(Note 12)
5
20
MHz
V
OSC
Oscillator Sensitivity
(Note 12)
0.5
1.0
V
pp
I
Do-source
Charge Pump Output Current
V
do = V P/2, Icpo = LOW
(Note 14)
−1.5
mA
I
Do-sink
V
do = V P/2, Icpo = LOW
(Note 14)
1.5
mA
I
Do-source
V
do = V P/2, Icpo = HIGH
(Note 14)
−6.0
mA
I
Do-sink
V
do = V P/2, ICPO = HIGH
(Note 14)
6.0
mA
I
Do-Tri
0.5
≤ V
do ≤ Vp − 0.5
T
A = 25˚C
−1.0
1.0
nA
FREQUENCY DOUBLER
f
IN = 945 MHz, fOUT = 1.89 GHz
f
OUT
Output Frequency Range
(Note 13)
1770
1900
MHz
P
OUT
Output Signal Level
P
IN = −11.5 dBm, fOUT = 1.89 GHz
−10
−3
dBm
Fundamental Output Power
P
IN = −11.5 dBm, fOUT = 945 MHz
−22
−13.5
dBm
Harmonic Output Power
P
IN = −11.5 dBm, fOUT = 2.835 GHz
−24
−15
dBm
Z
OUT
Output Impedance
TX chain powered up
25+j60
TX chain powered down
15-j30
VOLTAGE REGULATOR
V
O
Output Voltage
I
LOAD = 5 mA
2.55
2.75
2.90
V
DIGITAL INPUT/OUTPUT PINS
V
IH
High Level Input Voltage
2.4
V
CC
V
V
IL
Low Level Input Voltage
0.0
0.8
V
I
IH
Input Current
GND < V
IN < VCC
−10
10
µA
V
OH
High Level Output Voltage
I
OH=−0.5 mA
2.4
V
V
OL
Low Level Output Voltage
I
OL=0.5 mA
0.4
V
Note 3: The mixer section is tested at 1.89 GHz, and it is guaranteed by design to operate within 1.7 — 2.0 GHz range.
Note 4: The IF section of this device is designed for optimum operating performance at 110 MHz to meet the DECT specifications.
Note 5: The matching network used on RFIN consists of a series 3.3 pF capacitance into the pin. The matching circuit used on MIXEROUT consists of a series 100
nH inductance and a shunt 12 pF capacitance into the pin.
Note 6: Noise Figure measurements are made with 890 MHz BPF on the FIN input and matching networks on RFIN and MIXEROUT.
Note 7: The matching network used on IFIN consists of a series 33 nH inductance and a shunt 1.8 pF capacitance into the pin.
Note 8: The discriminator is with the DC level centered at 1.5V. The unloaded Q of the tank is 40.
Note 9: The frequency synthesizer section is guaranteed by design to operate within 500 - - 1200 MHz range.
Note 10: Nominal refers to zero DC offsets programmed for the discriminator.
Note 11: It depends on loss of inter-stage filter. These specifications are for an inter-stage filter with a loss of 8 dB.
Note 12: The frequency synthesizer section is guaranteed by design to operate for OSCIN input frequency within 5 — 20 MHz range and minimun amplitude of 0.5
Vpp.
www.national.com
6


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