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LMX3161VBH Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LMX3161VBH Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 14 page Electrical Characteristics (Continued) The following specifications are guaranteed for V CC = 3.6V and TA = 25˚C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit RSSI (Note 11) f IN = 110 MHz RSSI out Output Voltage P IN=−80 dBm@IFIN input pin 0.12 0.2 0.6 V P IN=−20 dBm@IFIN input pin 0.9 1.2 — V Slope P IN= −90 to −30 dBm@LIMIN input pin 11 18 25 mV/d B RSSI Dynamic Range P IN min= −90 dBm@LIMIN input pin — 60 — dB DC COMPENSATION CIRCUIT V OS Input Offset Voltage −5 — +5 mV V I/O Input/Output Voltage Swing Centered at 1.5V — 1.0 — V PP R SH Sample and Hold Resistor 2000 3000 3600 Ω FREQUENCY SYNTHESIZER P IN = −14 to −9 dBm f IN Input Frequency Range (Note 9) 500 — 1200 MHz P IN Input Signal Level Z IN=200Ω (Note 15) — −11.5 — dBm f OSC Oscillator Frequency Range (Note 12) 5 — 20 MHz V OSC Oscillator Sensitivity (Note 12) 0.5 1.0 — V pp I Do-source Charge Pump Output Current V do = V P/2, Icpo = LOW (Note 14) — −1.5 — mA I Do-sink V do = V P/2, Icpo = LOW (Note 14) — 1.5 — mA I Do-source V do = V P/2, Icpo = HIGH (Note 14) — −6.0 — mA I Do-sink V do = V P/2, ICPO = HIGH (Note 14) — 6.0 — mA I Do-Tri 0.5 ≤ V do ≤ Vp − 0.5 T A = 25˚C −1.0 — 1.0 nA FREQUENCY DOUBLER f IN = 945 MHz, fOUT = 1.89 GHz f OUT Output Frequency Range (Note 13) 1770 — 1900 MHz P OUT Output Signal Level P IN = −11.5 dBm, fOUT = 1.89 GHz −10 −3 — dBm Fundamental Output Power P IN = −11.5 dBm, fOUT = 945 MHz — −22 −13.5 dBm Harmonic Output Power P IN = −11.5 dBm, fOUT = 2.835 GHz — −24 −15 dBm Z OUT Output Impedance TX chain powered up — 25+j60 — Ω TX chain powered down — 15-j30 — Ω VOLTAGE REGULATOR V O Output Voltage I LOAD = 5 mA 2.55 2.75 2.90 V DIGITAL INPUT/OUTPUT PINS V IH High Level Input Voltage 2.4 — V CC V V IL Low Level Input Voltage 0.0 — 0.8 V I IH Input Current GND < V IN < VCC −10 — 10 µA V OH High Level Output Voltage I OH=−0.5 mA 2.4 — — V V OL Low Level Output Voltage I OL=0.5 mA — — 0.4 V Note 3: The mixer section is tested at 1.89 GHz, and it is guaranteed by design to operate within 1.7 — 2.0 GHz range. Note 4: The IF section of this device is designed for optimum operating performance at 110 MHz to meet the DECT specifications. Note 5: The matching network used on RFIN consists of a series 3.3 pF capacitance into the pin. The matching circuit used on MIXEROUT consists of a series 100 nH inductance and a shunt 12 pF capacitance into the pin. Note 6: Noise Figure measurements are made with 890 MHz BPF on the FIN input and matching networks on RFIN and MIXEROUT. Note 7: The matching network used on IFIN consists of a series 33 nH inductance and a shunt 1.8 pF capacitance into the pin. Note 8: The discriminator is with the DC level centered at 1.5V. The unloaded Q of the tank is 40. Note 9: The frequency synthesizer section is guaranteed by design to operate within 500 - - 1200 MHz range. Note 10: Nominal refers to zero DC offsets programmed for the discriminator. Note 11: It depends on loss of inter-stage filter. These specifications are for an inter-stage filter with a loss of 8 dB. Note 12: The frequency synthesizer section is guaranteed by design to operate for OSCIN input frequency within 5 — 20 MHz range and minimun amplitude of 0.5 Vpp. www.national.com 6 |
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