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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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BAS40W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS40W Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page  Production specification Surface Mount Schottky Barrier Diode BAS40W/-04/-05/-06 F017 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 10μA 40 V Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1.0mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V f=1MHz 5 pF Reverse recovery time trr IF=IR=10mA RL=100Ω 5 nS TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Número de pieza similar - BAS40W_14 |
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Descripción similar - BAS40W_14 |
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