BAS20-G3-08 datasheet(2/4 Pages) VISHAY

No. de pieza	BAS20-G3-08

Descripción Electrónicos	Small Signal Switching Diodes, High Voltage

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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2 / 4 page

BAS19-G, BAS20-G, BAS21-G

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Vishay Semiconductors

Rev. 1.1, 15-May-13

2

Document Number: 83390

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Device on fiberglass substrate, see layout drawing below

Layout for RthJA test

Thickness:



Fiberglass 1.5 mm (0.059 in.)



Copper leads 0.3 mm (0.012 in.)



THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Thermal resistance junction to ambient air (1)

RthJA

430

K/W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Operating temperature range

Top

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

1.0

V

IF = 200 mA

VF

1.25

V

Leakage current

VR = 100 V

BAS19-G

IR

100

nA

VR = 150 V

BAS20-G

IR

100

nA

VR = 200 V

BAS21-G

IR

100

nA

VR = VRmax., TJ = 150 °C

IR

100

μA

Dynamic forward resistance

IF = 10 mA

rf

5



Diode capacitance

VR = 0, f = 1 MHz

CD

5pF

Reverse recovery time

IF = IR = 30 mA, RL = 100 ,

iR = 3 mA

trr

50

ns

17451

15 (0.59)

12 (0.47)

0.8 (0.03)

5 (0.2)

7.5 (0.3)

3 (0.12)

1 (0.4)

2 (0.8)

1.5 (0.06)

5.1 (0.2)

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BAS20-G3-08 Datasheet(PDF) 2 Page - Vishay Siliconix

BAS20-G3-08 Datasheet(HTML) 2 Page - Vishay Siliconix

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