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BAV70 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV70 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page BL Gal Production specification Dual surface mount switching diode BAV70 C035 www.gmicroelec.com Rev.A 2 Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 2.5μA 75 V Reverse voltage leakage current IR VR=75V VR=20V VR=75V,Tj=150℃ VR=25V, Tj=150℃ 2.5 25 50 30 μA nA μA μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Total capacitance CT VR=0V,f=1MHz 2.0 pF Reverse recovery time trr IF=IR=10mA,IR=1mA , VR=5V,RL=100Ω 4 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified PACKAGE OUTLINE |
Número de pieza similar - BAV70_13 |
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Descripción similar - BAV70_13 |
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