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BAV74 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV74 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Dual surface mount switching diode BAV74 C036 www.gmicroelec.com Rev.A 1 FEATURES For high-speed switching appilication. Common cathode. APPLICATIONS Small signal switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code BAV74 JA SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Diode reverse voltage VR 50 V Peak Reverse Voltage VRM 50 V Forward Current IF 200 mA Surge forward current, t=1μs IFS 4.5 A Total Power Dissipation Ts=35℃ Ptot 250 mW Junction temperature Tj 150 ℃ Storage temperature range Tstg -65 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 100μA 50 V Reverse voltage leakage current IR VR=50V VR=50V TA=150℃ 0.1 100 μA Forward voltage VF IF=100mA 1 V Diode capacitance CD VR=0V,f=1MHz 2.0 pF Reverse recovery time t rr IF=IR=10mA,RL=100Ω 4 nS Pb Lead-free |
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