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IRF9520 Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF9520 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91074 www.vishay.com S11-0512-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF9520, SiHF9520 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , IAS = - 6.8 A (see fig. 12). c. ISD - 6.8 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) - 100 RDS(on) ()VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S G D P-Channel MOSFET TO-220AB G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9520PbF SiHF9520-E3 SnPb IRF9520 SiHF9520 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 6.8 A TC = 100 °C - 4.8 Pulsed Drain Currenta IDM - 27 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 300 mJ Repetitive Avalanche Currenta IAR - 6.8 A Repetitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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