SI7190DP datasheet(3/13 Pages) VISHAY

No. de pieza	SI7190DP

Descripción Electrónicos	N-Channel 250-V (D-S) MOSFET

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Document Number: 68985

S09-0997-Rev. B, 01-Jun-09

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Vishay Siliconix

Si7190DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

01

2

3

45

VGS =10 V thru 6 V

VGS =5 V

VGS =4 V

VDS - Drain-to-Source Voltage (V)

0.08

0.09

0.10

0.11

0.12

0.13

0.14

0

5

10

15

20

25

30

VGS =10 V

VGS =6 V

ID - Drain Current (A)

0

2

4

6

8

10

0

11223344

55

VDS =200 V,ID =4.3 A

VDS =125 V,ID =4.4 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

6

0123

456

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

800

1600

2400

3200

0

50

100

150

200

250

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

ID =4.4 A

VGS =6 V

VGS =10 V

TJ -Junction Temperature (°C)

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SI7190DP Datasheet(PDF) 3 Page - Vishay Siliconix

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