Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI7806ADN Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI7806ADN
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7806ADN Datasheet(HTML) 2 Page - Vishay Siliconix

  SI7806ADN Datasheet HTML 1Page - Vishay Siliconix SI7806ADN Datasheet HTML 2Page - Vishay Siliconix SI7806ADN Datasheet HTML 3Page - Vishay Siliconix SI7806ADN Datasheet HTML 4Page - Vishay Siliconix SI7806ADN Datasheet HTML 5Page - Vishay Siliconix SI7806ADN Datasheet HTML 6Page - Vishay Siliconix SI7806ADN Datasheet HTML 7Page - Vishay Siliconix SI7806ADN Datasheet HTML 8Page - Vishay Siliconix SI7806ADN Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
www.vishay.com
2
Document Number: 72995
S-83050-Rev. D, 29-Dec-08
Vishay Siliconix
Si7806ADN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 14 A
0.009
0.011
Ω
VGS = 4.5 V, ID = 12 A
0.013
0.016
Forward Transconductancea
gfs
VDS = 15 V, ID = 14 A
32
S
Diode Forward Voltagea
VSD
IS = 3.2 A, VGS = 0 V
0.8
1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 5 V, ID = 14 A
13.2
20
nC
Gate-Source Charge
Qgs
5.3
Gate-Drain Charge
Qgd
4.3
Gate Resistance
Rg
0.9
1.8
2.7
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
13
20
ns
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
33
50
Fall Time
tf
10
15
Source-Drain Reverse Recovery Time
trr
IF = 2.3 A, dI/dt = 100 A/µs
25
40
Output Characteristics
0
5
10
15
20
25
30
35
40
0
1234
5
VGS = 10 thru 5 V
VDS - Drain-to-Source Voltage (V)
4 V
3 V
Transfer Characteristics
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
TC = 125 °C
25 °C
- 55 °C


Número de pieza similar - SI7806ADN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI7806ADN VISHAY-SI7806ADN Datasheet
533Kb / 12P
   N-Channel 30-V (D-S) MOSFET
01-Jan-2022
SI7806ADN VISHAY-SI7806ADN_V01 Datasheet
533Kb / 12P
   N-Channel 30-V (D-S) MOSFET
01-Jan-2022
More results

Descripción similar - SI7806ADN

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI3456DV VISHAY-SI3456DV Datasheet
61Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. B, 23-Nov-98
SUU50N03-12P VISHAY-SUU50N03-12P Datasheet
60Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 15-Sep-03
SI4894DY VISHAY-SI4894DY Datasheet
129Kb / 3P
   N-Channel 30-V (D-S) MOSFET
17-May-04
SI4406DY VISHAY-SI4406DY Datasheet
38Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. C, 26-May-03
SI7380DP VISHAY-SI7380DP Datasheet
180Kb / 3P
   N-Channel 30-V (D-S) MOSFET
24-May-04
SI733ADP VISHAY-SI733ADP Datasheet
61Kb / 5P
   N-Channel 30-V (D-S) MOSFET
Rev. A, 25-Oct-04
SI4892DY VISHAY-SI4892DY Datasheet
71Kb / 4P
   N-Channel 30-V (D-S) MOSFET
Rev. F, 01-Aug-05
logo
Vaishali Semiconductor
SI4356ADY VAISH-SI4356ADY Datasheet
143Kb / 3P
   N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SIRA00DP VISHAY-SIRA00DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA04DP VISHAY-SIRA04DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 13-Feb-12
SIRA14DP VISHAY-SIRA14DP Datasheet
513Kb / 13P
   N-Channel 30 V (D-S) MOSFET
Rev. A, 12-Mar-12
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com