SI7159DN datasheet(3/7 Pages) VISHAY

No. de pieza	SI7159DN

Descripción Electrónicos	P-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 68872

S-82122-Rev. A, 08-Sep-08

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Vishay Siliconix

Si7159DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

12

24

36

48

60

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10thru 4 V

VGS =1 V,2 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.005

0.006

0.007

0.008

0.009

0.010

0

102030

405060

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

0

2

4

6

8

10

0

25

50

75

100

125

VDS =20 V

ID =10A

VDS =15 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

01

2

3

45

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

1500

3000

4500

6000

7500

0

5

10

15

20

25

30

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = - 4.5 V

VGS = - 10 V

ID = - 15 A

TJ -Junction Temperature (°C)

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Descripción similar - SI7159DN

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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