SI7456CDP datasheet(4/7 Pages) VISHAY

No. de pieza	SI7456CDP

Descripción Electrónicos	N-Channel 100 V (D-S) MOSFET

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Document Number: 65941

S10-0785-Rev. A, 05-Apr-10

Vishay Siliconix

Si7456CDP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 0.8

- 0.6

- 0.4

- 0.2

0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

012

345

67

89

10

TJ = 25 °C

ID =10A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0

40

80

120

160

200

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 ms

1s

Limited by RDS(on)*

BVDSS Limited

1ms

10 ms

10 s

DC

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

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SI7456CDP Datasheet(PDF) 4 Page - Vishay Siliconix

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