SI7356ADP datasheet(3/7 Pages) VISHAY

No. de pieza	SI7356ADP

Descripción Electrónicos	N-Channel 30-V (D-S) MOSFET

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Document Number: 73425

S-80439-Rev. B, 03-Mar-08

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Vishay Siliconix

Si7356ADP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

60

70

0.0

0.3

0.6

0.9

1.2

1.5

VGS = 10 thru 4 V

VDS - Drain-to-Source Voltage (V)

3 V

0.0020

0.0024

0.0028

0.0032

0.0036

0.0040

0

102030405060

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0

20406080

100

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 20 V

VDS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

0

1600

3200

4800

6400

8000

0

5

10

15

20

25

30

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID = 20 A

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