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SI4438DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4438DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 73581 S09-0228-Rev. B, 09-Feb-09 Vishay Siliconix Si4438DY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 31 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 6.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.4 2.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0022 0.0027 Ω VGS = 4.5 V, ID = 15 A 0.0033 0.004 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 86 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 4645 pF Output Capacitance Coss 900 Reverse Transfer Capacitance Crss 555 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A 84 126 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 41 62 Gate-Source Charge Qgs 14.6 Gate-Drain Charge Qgd 16.5 Gate Resistance Rg f = 1 MHz 1.3 2 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 36 55 ns Rise Time tr 210 320 Turn-Off Delay Time td(off) 39 60 Fall Time tf 18 30 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 17 26 Rise Time tr 86 130 Turn-Off Delay Time td(off) 47 75 Fall Time tf 10 16 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 7 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 3 A 0.73 1.1 V Body Diode Reverse Recovery Time trr IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 43 65 ns Body Diode Reverse Recovery Charge Qrr 45 70 nC Reverse Recovery Fall Time ta 22 ns Reverse Recovery Rise Time tb 21 |
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