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MTB9D0P03H8 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTB9D0P03H8 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 11 page CYStech Electronics Corp. Spec. No. : C050H8 Issued Date : 2017.04.05 Revised Date : 2017.04.10 Page No. : 5/11 MTB9D0P03H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -ID, Drain-Source Voltage(V) DC 10ms 100ms 100 μs TA=25°C, Tj=150°C, VGS=-10V RθJA=23°C/W, Single Pulse 1s 1ms RDS(ON) Limited Gate Charge Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 Qg, Total Gate Charge(nC) ID=-12A VDS=-15V VDS=-20V Maximum Drain Current vs Junction Temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, Tj=150°C, VGS=-10V RθJA=23°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) VDS=-10V Pulsed TA=25°C |
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