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BCX69-25 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BCX69-25 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 4 page Production specification PNP Silicon AF Transistors BCX69 E068 www.gmicroelec.com Rev.A 1 FEATURES For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. Complementsry type:BCX68. SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX69 CE SOT-89 BCX69-10 CF SOT-89 BCX69-16 CG SOT-89 BCX69-25 CH SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A ICM Collector Current -Peak -2 A IB Base Current -0.1 A IBM Peak Base Current -0.2 A PD Total Power Dissipation 1 W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
Número de pieza similar - BCX69-25 |
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Descripción similar - BCX69-25 |
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