2SD999 datasheet(1/5 Pages) BILIN

No. de pieza	2SD999

Descripción Electrónicos	NPN Silicon Epitaxial Transistor

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Fabricante Electrónico	BILIN [Galaxy Semi-Conductor Holdings Limited]

Página de inicio	http://www.galaxycn.com

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Production specification

NPN Silicon Epitaxial Transistor

2SD999

E117

www.gmicroelec.com

Rev.B

1

FEATURES

Low Collector Saturation Voltage:

VCE(sat)<0.4V( IC=1.0A,IB =100mA)

Excellent DC Current Gain Linearity:

hFE=140Typ.( VCE=1.0V, IC=1.0A)

Complements to PNP type 2SB798

SOT-89

ORDERING INFORMATION

Type No.

Marking

Package Code

2SD999

CM/CL/CK

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

1.0

A

PC

Collector power dissipation

2.0

W

Tj

Junction Temperature

-55 to +150

℃

Tstg

Storage Temperature

-55 to +150

℃

Pb

Lead-free

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2SD999 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

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