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STDV5804NT4G Datasheet(PDF) 1 Page - ON Semiconductor

No. de Pieza. STDV5804NT4G
Descripción  Power MOSFET
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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STDV5804NT4G Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 11
1
Publication Order Number:
NTD5804N/D
NTD5804N, NTDV5804N,
SVD5804N
Power MOSFET
40 V, 69 A, Single N−Channel, DPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
NTDV, STDV and SVD Prefix for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
±30
V
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TC = 25°C
ID
69
A
TC = 100°C
49
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
71
W
Pulsed Drain Current
tp = 10 ms
IDM
125
A
Operating Junction and Storage Temperature
TJ, Tstg
− 55 to
175
°C
Source Current (Body Diode)
IS
60
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V)
EAS
195
mJ
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
106
1. Surface−mounted on FR4 board using the minimum recommended pad size.
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
40 V
12 m
W @ 5.0 V
RDS(on) MAX
ID MAX
V(BR)DSS
7.5 m
W @ 10 V
www.onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain 3
Source
4
Drain
A
= Assembly Location*
Y
= Year
WW
= Work Week
5804N = Device Code
G
= Pb−Free Package
69 A
G
S
N−Channel
D
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.


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