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MC33170 Datasheet(PDF) 14 Page - ON Semiconductor |
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MC33170 Datasheet(HTML) 14 Page - ON Semiconductor |
14 / 16 page MC33170 http://onsemi.com 14 Figure 17a. Typical GSM/DCS pins response time Figure 17b. Peak current capability of the power switch 1: Tx Enable 2: GSM/DCS control pin 1: Tx Enable 2: Start-up in Start-up current 68W//220nF 500mA/div Complete dual–band application Figure 18 shows how implementing the MC33170 in a complete dual–band application where a 100kHz filter is combined with the MOSFET driver. Figure 18. A complete dual–band application with the MC33170 1 2 3 4 5 6 7 14 13 12 11 10 9 8 + Battery TX Enable Band Selection Modulation Ramp R6 100 k C7 22 pF C8 33 pF R10 108 k C6 680 pF R9 19.88 k R7 100 k M2 MTSF3N02HD Chip Enable Zener Vboost Power GSM DCS Start C5 100 nF 10 pF C9 R8 1 k Band TxEn GSM DCS PA Start GND Vbat CE Neg. Reg Out Vboost INV NINV LDO MC33170 Application The MC33170 has been designed to fulfill the requirements of the new ON Semiconductor dual–band RF amplifier, the MRFIC1859. For demonstration purposes, the device was driven by the MC33170 in a simple gain two configuration. The below picture shows how the power signal drives the PA’s drain. |
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