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STD100GKXX Datasheet(Hoja de datos) 3 Page - Sirectifier Semiconductors

No. de Pieza. STD100GKXX
Descripción  Thyristor-Diode Modules
Descarga  4 Pages
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Fabricante  SIRECTIFIER [Sirectifier Semiconductors]
Página de inicio  http://www.sirectifier.com
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Thyristor-Diode Modules
Fig. 1 Surge overload current
I
TSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 4 Gate trigger characteristics
Fig. 6 Gate trigger delay time
100
101
102
103
104
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125
oC
2: IGT, TVJ = 25
oC
3: IGT, TVJ = -40
oC
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, TVJ = 125
oC
3
4
2
1
5 6
10
100
1000
1
10
100
1000
mA
IG
s
tgd
Limit
typ.
TVJ = 25
oC
3 x STD/SDT100
3 x STD/SDT
100
STD100GKXX
P3
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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
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