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STP7N90K5 Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. STP7N90K5
Descripción  Zener-protected
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STP7N90K5 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STP7N90K5
Electrical characteristics
DocID029826 Rev 1
5/13
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay
time
VDD= 450 V, ID = 3.5 A, RG
= 4.7 Ω
VGS = 10 V
(see Figure 14: "Test circuit for resistive
load switching times" and Figure 19:
"Switching time waveform")
-
13.2
-
ns
tr
Rise time
-
14.2
-
ns
td(off)
Turn-off delay
time
-
31.6
-
ns
tf
Fall time
-
14.7
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain
current
-
7
A
ISDM(1)
Source-drain
current (pulsed)
-
28
A
VSD(2)
Forward on
voltage
ISD = 7 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery
time
ISD = 7 A, di/dt = 100 A/µs,VDD = 60 V
(see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
-
352
ns
Qrr
Reverse recovery
charge
-
3.63
µC
IRRM
Reverse recovery
current
-
20.6
A
trr
Reverse recovery
time
ISD = 7 A, di/dt = 100 A/µs VDD = 60 V,
Tj = 150 °C
(see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
-
525
ns
Qrr
Reverse recovery
charge
-
4.94
µC
IRRM
Reverse recovery
current
-
18.8
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source
breakdown
voltage
IGS= ± 1mA, ID= 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.


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