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STP18N60M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP18N60M2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page DocID024735 Rev 2 5/21 STB18N60M2, STP18N60M2, STW18N60M2 Electrical characteristics 21 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 13 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 52 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 13 A, V GS = 0 - 1.6 V t rr Reverse recovery time I SD = 13 A, di/dt = 100 A/μs V DD = 60 V (see Figure 17) -305 ns Q rr Reverse recovery charge - 3.3 μC I RRM Reverse recovery current - 22 A t rr Reverse recovery time I SD = 13 A, di/dt = 100 A/μs V DD = 60 V, T j = 150 °C (see Figure 17) -417 ns Q rr Reverse recovery charge - 4.6 μC I RRM Reverse recovery current - 22 A |
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