STF24N65M2 datasheet(4/20 Pages) STMICROELECTRONICS

No. de pieza	STF24N65M2

Descripción Electrónicos	Extremely low gate charge

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Electrical characteristics

STB24N65M2, STF24N65M2, STP24N65M2

4/20

DocID026475 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

1

µA

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 8 A

0.185

0.23

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1060

-

pF

Coss

Output capacitance

-

47.5

-

pF

Crss

Reverse transfer capacitance

-

1.65

-

pF

C oss eq.(1)

Equivalent output capacitance

VDS = 0 to 520 V, VGS = 0

-

229

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0

-

7

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 16 A,

VGS = 10 V

-

29

-

nC

Qgs

Gate-source charge

-

3.8

-

nC

Qgd

Gate-drain charge

-

14

-

nC

Notes:

(1) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 8 A,

RG =

4.7 Ω, VGS = 10 V

-

10

-

ns

tr

Rise time

-

9.5

-

ns

td(off)

Turn-off delay time

-

68

-

ns

tf

Fall time

-

25.5

-

ns

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