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STP2N105K5 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP2N105K5
Descripción Electrónicos  N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
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STP2N105K5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID026321 Rev 3
3/21
STD2N105K5, STP2N105K5, STU2N105K5
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
1.5
A
ID
Drain current (continuous) at TC = 100 °C
0.95
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
6
A
PTOT
Total dissipation at TC = 25 °C
60
W
IAR
Max current during repetitive or single pulse avalanche
0.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=0.5 A, VDD= 50 V)
90
mJ
dv/dt (2)
2.
ISD ≤ 1.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(3)
3.
VDS ≤ 840 V
MOSFET dv/dt ruggedness
50
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.08
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.50
°C/W


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